Insights Review of Microelectronic Devices

The continued scaling of semiconductor devices to smaller dimensions has posed significant challenges for traditional planar MOSFETs, including short-channel effects, power dissipation, and leakage currents. To overcome these limitations, various advanced transistor architectures have emerged. FinFETs are widely adopted in sub-22-nm nodes due to their 3D fin structure, which improves electrostatic control, reduces leakage, and enhances drive current. This makes FinFETs ideal for both low-power systems and high-performance applications. Tunnel FETs (TFETs) use quantum tunneling to provide an alternate route to current conduction allowing for a subthreshold swing of less than 60 mV per decade. This feature makes TFETs particularly appealing for ultra-low-power applications, as they provide great energy efficiency. However, one major problem for TFETs is raising their on-state current, which is lower than that of traditional transistors, such as MOSFETs or FinFETs, restricting their use in high-performance applications. Despite this, the potential of TFETs for power-sensitive devices continues to drive research efforts aimed at improving their overall performance and scalability. Nanowire FETs (NW-FETs) utilize a cylindrical, multi-gate design that completely surrounds the channel offering excellent electrostatic control and scalability for future technology nodes. Similarly, nanosheet FETs provide a planar, multi-gate approach with stacked nanosheets enabling further scaling and enhanced performance. Emerging transistors, like the ferroelectric FET (Fe-FET) and negative capacitance FET (NC-FET), focus on reducing power consumption by integrating ferroelectric materials. Fe-FETs offer non-volatile memory capabilities, while NC-FETs utilize the negative capacitance effect to reduce the subthreshold slope enhancing switching speed and lowering power consumption. Additionally, planar nano-FETs and vertical nano-FETs are attracting growing interest for their ability to surpass the limitations of traditional MOSFETs. These advanced transistor designs offer improved scalability and enhanced electrostatic control positioning them as promising candidates for next-generation semiconductor technologies. Their unique architectures enable better performance in high-density and power-efficient applications making them key contenders in the future of nanoelectronics. Planar nano-FETs provide enhanced channel control, while vertical Nano-FETs stack transistors vertically improving device density and enabling 3D integration for next-generation chips. This chapter focuses on operational principles, advantages, and challenges of different types of FETs. By comparing their performance, scalability, and energy efficiency, these novel devices offer valuable insights into how they can drive future semiconductor innovations meeting the increasing demand for higher performance and lower power consumption in modern electronics. By overcoming old technology restrictions, they pave the way for more efficient, scalable solutions, which are increasingly important as devices shrink and power efficiency becomes a major aspect in next-generation applications.