Silicon Nanowire Field Effect Transistor and Its Applications

This chapter analyzes the design, manufacture, and performance of multi-gate silicon semiconductor devices, which have emerged as a possible alternative to address the limits of classic planar transistors in advanced microelectronics. As device dimensions drop and performance needs grow, multi-gate designs offer greater control over short-channel effects, increased drive currents, and lowered leakage currents. A complete analysis of multi-gate device operation, electrostatic control, and carrier mobility improvement has been addressed, including material and process issues involved with their integration into existing CMOS technology. The function of silicon in a dielectric modulated junctionless surrounding triple-hybrid metal (THM) gate SiNWFET-based uricase and ChOx biosensor was designed using 40-nm engineering (20-nm gate length) to study the effect of gate engineering optimization with various metal work functions on device performance. Device characteristics, such as cavity length, thickness, and different gate electrode work functions, are explored to optimize biosensing performance for uricase and ChOx biomolecules. Three types of gate engineering, denoted by M ϕ (4.86, 4.96, and 4.50 eV), O ϕ (4.96, 4.86, and 4.50 eV), and Q ϕ (4.86, 4.50, and 4.9 6eV), each having different metal work functions, have been incorporated as gate electrode, including biomolecules coated within the nanocavity, to study their effects on the device. Extensive simulations were performed using the ATLAS-TCAD simulator to verify and evaluate the analytical results showing excellent agreement with the simulated results. This study finds that a nanocavity covered with ChOx dielectric, tailored for an adjustable work function at “O,” demonstrates enhanced device performance and sensitivity. The study examines devices that improve gate electrode work function at “O” promising progress in ultralarge-scale integration (ULSI). With efficient and reliable performance, these devices can replace deep-submicron conventional MOSFETs in low-power applications.