Internal Organization of a Generic Asynchronous Static Random‐Access Memory

The static model plays an important role in data storage thanks to its easy interfacing and very low access time. This chapter presents the internal organization of a generic asynchronous static random access memory (SRAM), specifying the structure of the basic cell and its overall organization. The core of the memory cell, also called the memory point, is a flip-flop. At the electrical schematic level, it always includes two symmetrical branches, left and right. The chapter shows the organization of one of the first SRAM memories using transistor-transistor logic technology and having a capacity of 4 Kib. A read amplifier is associated with a group of 64 differential columns. The first commercial SRAM introduced by Intel in 1969 was manufactured using bipolar technology. It was followed, a few months later, by the first static memory using P-channel metal-oxide semiconductor technology.