Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application (Adv. Funct. Mater. 28/2026)
Abstract
Pentagonal 2D Altermagnets In their Research Article (10.1002/adfm.202505145), Yee Sin Ang, Zhenxiang Cheng, Shibo Fang, and co-workers identify the first altermagnetic second-order topological insulator, Penta-MnS2, and design a related high-performance altermagnetic tunneling junction. The figure illustrates a tunneling junction composed of MnS2, featuring both spin-polarized corner states and altermagnetic Bloch states. This work provides a new direction for the development of future low-power, high-speed memory devices.
Fields of Study & Subjects
Topological Materials and Phenomena
2D Materials and Applications
Chemical and Physical Properties of Materials
Publication details
- Journal / source
- Advanced Functional Materials
- Publisher
- Wiley
- Volume
- 36
- Issue
- 28
- Publication date
- 1 April 2026
- Language
- EN