Altermagnetic Flatband‐Driven Fermi Surface Geometry for Giant Tunneling Magnetoresistance (Adv. Funct. Mater. 35/2026)
Abstract
Giant Tunneling Magnetoresistance Flatband-engineered altermagnets open a new pathway for designing high-performance altermangetic tunnel junction. In the Research Article (DOI: 10.1002/adfm.202531921), Jing Lu, Yee Sin Ang, and co-workers show that nodal-like spin-degenerate intersections in KV2Se2O, a room-temperature d-wave altermagnet, effectively suppress antiparallel state leakage current, leading to record-high tunneling magnetoresistance in a magnetic tunnel junction device setup. These symmetry-protected flat Fermi sheets establish a Fermi-surface-geometry-driven design paradigm for next-generation spintronic and memory technologies.
Fields of Study & Subjects
Topological Materials and Phenomena
Surface and Thin Film Phenomena
Chemical and Physical Properties of Materials
Publication details
- Journal / source
- Advanced Functional Materials
- Publisher
- Wiley
- Volume
- 36
- Issue
- 35
- Publication date
- 1 April 2026
- Language
- EN