Ferroelectric‐Insulator‐Engineered Organic p‐n Heterojunction Optoelectronic Synaptic Transistors for Energy‐Efficient Neuromorphic Computing and Dynamic Machine Vision

ABSTRACT Organic p‐n heterojunctions provide a powerful and broad application for optoelectronics by converting photoexcited charges into mobile carriers via charge transfer. However, the charge‐separation efficiency is frequently constrained by exciton binding and interfacial recombination, which impair the photosynaptic gain of transistors and the resolution of bionic vision hardware. Here, a ferroelectric dielectric is employed as an active electrostatic regulator that establishes a switchable, polarization‐induced built‐in electric field to reshape the heterojunction energetics. This internal field effectively drives exciton dissociation, expedites charge transfer across the interface, and suppresses recombination, thereby substantially amplifying the photoresponse. Leveraging this concept, we present a ferroelectric‐insulator‐modulated organic p‐n heterojunction synaptic transistor (OHST) featuring enhanced and tunable optoelectronic synaptic behavior for low‐power neuromorphic sensing‐computing and the field of dynamic machine vision. Furthermore, the built‐in electric field generated by ferroelectric polarization effectively reduces the working voltages (| V g | ≤ 5 V) and energy consumption (the single‐pulse energy consumption is only 22 aJ). Benefiting from its excellent photosensitivity ( p = 3.19 × 10 4 ), the paired‐pulse facilitation index reaches as high as 247%, making it highly competitive among similar devices. This device demonstrates significant potential for enabling wide‐spectrum visual perception, neuromorphic computing, and advancing next‐generation artificial neuromorphic vision systems.