Disorder‐Broadened Topological Hall Phase and Anomalous Hall Scaling in FeGe

ABSTRACT Magnetic skyrmions are promising candidates for next‐generation spintronic memory and logic due to their nanoscale size and topological stability. However, skyrmion‐based devices remain limited by narrow operating temperature windows that typically exclude cryogenic regimes critical for quantum‐hybrid architectures. Here, we demonstrate that ion‐beam‐engineered disorder landscapes in B20‐phase FeGe thin films dramatically extend the temperature window over which the topological Hall‐like signal is observed, from in pristine films down to liquid‐helium temperatures () in the irradiated samples. The disorder‐broadened topological Hall phase exhibits doubled signal amplitude compared to that of the pristine films, consistent with enhanced chiral spin‐texture density. Simultaneously, we achieve systematic tunability of the anomalous Hall response by transitioning between distinct scattering regimes via ion‐beam modification. Scanning transmission electron microscopy and electron ptychography reveal that nanoscale point‐defect clusters could drive these emergent properties. These findings establish defect‐landscape engineering as a versatile strategy to extend the stability of the topological Hall phase, offering a general framework for tailoring topological spin textures in next‐generation cryogenic spintronic architectures.