Wide Bandgap Lanthanide Oxybromides High‐ κ Dielectrics for High‐Performance Two‐Dimensional Electronics

Advanced Materials 2026

View at publisher
Authors: Yingying Li, Yue Tang, Guobin Ma, Yujing Qiao, Fukun Yan, Yiru Gu, Siqi Gao, Tianyou Zhai, Lei Zhang, Hua Xu
DOI: 10.1002/adma.202519042
Cited by: 2
References: 28

Abstract

ABSTRACT High‐ κ single‐crystal dielectrics serve as fundamental components in next‐generation 2D electronics. However, the inevitable high leakage current caused by Schottky emission, which stems from the absence of a sufficiently wide bandgap in high‐ κ dielectrics, limits device performance. Here, we show that 2D lanthanide oxybromides ( Ln OBr, Ln = La, Ce, Nd, Sm, Eu, Gd, Ho, and Er) synthesized by the chemical vapor deposition method exhibit a wide bandgap (>5.7 eV), tunable thickness, and feature of high‐quality single crystal. Meanwhile, 2D LaOBr single crystal displays high dielectric constant (14.8), low leakage current density (

Fields of Study & Subjects

2D Materials and Applications Ferroelectric and Negative Capacitance Devices Electronic and Structural Properties of Oxides

Publication details

Journal / source
Advanced Materials
Publisher
Wiley
Volume
38
Issue
22
Pages
e19042–e19042
Publication date
19 March 2026
Language
EN