Engineering Temperature‐Switchable Conducting Metal–Phenolic Network Films

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Authors: Tianzheng Wang, Zhixing Lin, Ben McLean, Omid Mazaheri, Azmira Jannat, Xiangyang Guo, Wanjun Xu, Joseph J. Richardson, Irene Yarovsky, Ali Zavabeti, Frank S Caruso
Cited by: 1
References: 50

Abstract

ABSTRACT Designing energy‐efficient materials capable of transitioning between insulating and conducting states with ultrahigh ON/OFF ratios is a key challenge in advancing electronic materials. Herein, a class of materials exhibiting temperature‐tunable insulator–metal transitions based on the facile chemistry of metal–phenolic networks (MPNs) is reported. Enhanced π – π stacking in the materials at elevated temperatures triggers a transition from insulating to highly conductive states, as confirmed experimentally and by molecular dynamics simulations. The MPN films (∼10–300 nm thick) exhibit ultrahigh OFF‐state resistance, tunable transition temperatures (354–504 K), ultrafast switching speeds (18 cm 2 ), tunable electrical properties (via ligand and metal choice), and compatibility with diverse electronic devices and circuits. This work offers a pathway to developing low‐cost, customizable material platforms for smart electronics.

Fields of Study & Subjects

Synthesis and Properties of Aromatic Compounds 2D Materials and Applications Organic Electronics and Photovoltaics

Publication details

Journal / source
Advanced Materials
Publisher
Wiley
Volume
38
Issue
11
Pages
e20092–e20092
Publication date
14 January 2026
Language
EN