Nanolaminate Ferroelectric Transistor Enabling Wide‐Reservoir In Sensor Neuromorphic Vision

View at publisher
Authors: Gaoyun An, Seungjun Lee, Hyeonho Lee, Gimun Kim, Tae‐Hyeon Kim, Heung Soo Kim, Chai Yang, Sungjun Kim
Cited by: 1
References: 41

Abstract

ABSTRACT This work reports a hardware‐oriented hybrid reservoir computing (HRC) system based on a nanolaminate ferroelectric thin‐film transistor (FeTFT) that unifies volatile and nonvolatile functions in a single three‐terminal device. The HZO/HfO 2 /HZO gate stack modulates grain size and suppresses ferroelectric variability, enabling precise multilevel control and highly linear weight updates via the incremental step pulse with verify algorithm (ISPVA). Electrical input induces long‐term memory, while optical excitation yields short‐term memory, allowing dual‐mode operation. Light‐driven 4‐bit reservoirs operate at picoampere currents (∼10 pW/device) and emulate nociceptive neuron behavior. Combining three wavelength‐dependent reservoirs (405, 450, 532 nm) expands the feature space and improves classification accuracy. Using ISPVA‐linearized readout, the system achieves 93.1% and 85.1% accuracies on MNIST and Fashion‐MNIST, respectively exceeding prior FeTFT/memristor‐based RC systems. This approach establishes a scalable, energy‐efficient route toward multifunctional in‐sensor neuromorphic computing based on a unified ferroelectric platform.

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Advanced Memory and Neural Computing Neural Networks and Reservoir Computing

Publication details

Journal / source
Advanced Materials
Publisher
Wiley
Volume
38
Issue
15
Pages
e22251–e22251
Publication date
6 February 2026
Language
EN