Experimentally Mapping the Elemental Doping of MoS 2 Monolayer

Advanced Materials 2026

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Authors: Zunaira Urooj, You Li, Junxu Mao, Haiming Sun, Ting Tan, Junjie Qi, Juanxia Wu, Qiang Zheng, Tariq Abbas, Misbah Younas, Honggang Wang, Yuansha Chen
+2 more Kazu Suenaga, Liming Xie
DOI: 10.1002/adma.202522574
Cited by: 4
References: 39

Abstract

ABSTRACT For the atomically thin 2D semiconductors with great potentials in the post Moore's era, the doping is a prerequisite for the device engineering and integration. Limited by the doping approaches, elemental doping of 2D semiconductors has not been fully explored. Here, by using a liquid phase edge epitaxy method which can dissolve the dopants in the liquid phase, we have succeeded in doping MoS 2 monolayer with more than 40 elements (including transition metals, lanthanides, and main group elements). In this doping library, rarely observed p ‐type transport behavior has been obtained in Ti, Zn, and Au doped MoS 2 monolayers. While Cu, Ga, Zr, Nb, In, Sn, Hf, Ta, Pb, Bi and rare earth of Eu, Gd, Tm, Lu doped MoS 2 monolayers have showed low on/off ratios (

Fields of Study & Subjects

2D Materials and Applications Topological Materials and Phenomena Heusler alloys: electronic and magnetic properties

Publication details

Journal / source
Advanced Materials
Publisher
Wiley
Volume
38
Issue
20
Pages
e22574–e22574
Publication date
14 March 2026
Language
EN