Microstructure Optimization via Grain‐Boundary Segregation to Enhance DC Bias Dielectric Performance of BaTiO 3 Multilayer Ceramic Capacitors (Adv. Mater. 1/2026)

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Authors: Ji‐Sang An, Juneseo Ahn, Younghwan H Lim, Hyung Bin Bae, J. K. Ryu, S. W. Chung
Cited by: 1

Abstract

Interface Segregation in Dielectrics In their Research Article (DOI: 10.1002/adma.202507233), Sung-Yoon Chung and co-workers overturn the long-standing reliance on multiple additives and costly rare-earth elements in MLCCs by demonstrating that a single acceptor-type additive enables superior dielectric performance. Through atomic-scale grain-boundary segregation in nanocrystalline BaTiO3, they achieve dielectric loss below 0.8% up to 100 MHz and under 2.5% up to 1 GHz, while maintaining high effective permittivity even under electric fields as high as 80 kV/cm and exhibiting excellent temperature stability.

Fields of Study & Subjects

Ferroelectric and Piezoelectric Materials Dielectric properties of ceramics Dielectric materials and actuators

Publication details

Journal / source
Advanced Materials
Publisher
Wiley
Volume
38
Issue
1
Publication date
1 January 2026
Language
EN