Revisiting Ferroelectric‐Gated Phototransistors: A Tripartite Synapse‐Inspired Approach to In‐Sensor Image Processing (Adv. Mater. 1/2026)

Advanced Materials 2026 Open access

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Authors: Yubin Lee, Dong Hyun Seo, Jun Seo Lee, Jae Min Jeon, Hyung Rae Kim, Min Seok kim, Chaehyeon Ahn, Sung‐Un An, Jihun Choi, H. J. Kim, Chang Kyu Jeong, Hyunseob Lim
+2 more Dong‐Ho Kang, Young Min Song
DOI: 10.1002/adma.71876
Cited by: 0

Abstract

Revisiting Ferroelectric-Gated Phototransistors The cover depicts ferroelectric-gated phototransistors inspired by the tripartite synapse, enabling in-sensor face recognition with all-day operation through partial polarization switching of P(VDF-TrFE). More details can be found in the Research Article by Dong-Ho Kang, Young Min Song, and co-workers (DOI: 10.1002/adma.202503475).

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Advanced Sensor and Energy Harvesting Materials Ferroelectric and Piezoelectric Materials

Publication details

Journal / source
Advanced Materials
Volume
38
Issue
1
Publication date
1 January 2026
Language
EN