A Widely Tunable Spin‐Orbit Torque Device through the Silicon Compatible CMOS Platform (Adv. Mater. 4/2026)

Tunable Spin-Orbit Torque Devices In their Research Article (DOI: 10.1002/adma.202509228), Qi Lu, Bin Peng, Ming Liu, and co-authors present a large tunable and highly integrated spin-orbit torque device based on the standard silicon complementary metal–oxide–semiconductor technology. The cover depicts the charge-to-spin conversion process in the spin-orbitronic devices. The athletes in the cover represent elementary charges which are attempting to overcome the energy barrier and transform into the spin. The vaulting poles they grip symbolize the applied voltage across the ultrathin ferroelectric layer. Thanks to this voltage “vaulting pole”, this physical process becomes more easier and the charge-to-spin conversion efficiency is significantly enhanced. The proposed integrated devices with hybrid architectures exhibit promising potential for low-power SOT-MRAM and other unconventional spin computing frameworks beyond Boolean logic.