Reliable Vapor‐Deposited Tin Perovskites for High‐Performance and Low‐Power Complementary Electronics

ABSTRACT Tin (Sn 2+ ) perovskites are promising lead‐free semiconductors for high‐performance p‐type thin‐film transistors (TFTs), yet their reproducibility and reliability remain a major obstacle. Subtle variations in precursor chemistry and solvent coordination critically influence colloidal dynamics and crystallization, leading to inconsistent film quality and device performance. Here, we systematically benchmark multiple commercial Sn 2+ precursors across both solution and vapor deposition routes. While solution‐processed devices exhibit strong precursor dependence, vapor‐deposited films yield consistent TFT performance, achieving hole mobility (∼30 cm 2 V −1 s −1 ) and excellent stability regardless of precursor origin. By leveraging thermodynamically driven separation of volatile impurities prior to film nucleation, the vapor‐phase process standardizes crystallization dynamics and enables precursor‐agnostic formation of uniform and dense films with large grains. Built on this robust and scalable platform, integrated p‐type Sn 2+ ‐perovskite/n‐type oxide circuits deliver high gain and ultra‐low static power consumption at the picowatt level, establishing vapor‐phase deposition as a reliable route for low‐power complementary electronics.