Electronic Excitation‐Driven β‐Ga 2 O 3 Metastability Transformation and Self‐Organization Mechanism: β→κ/γ/δ Phases (Adv. Mater. 23/2026)
Abstract
Ion Beam engineering of Optoelectronic Properties in Semiconductors Irradiation-driven multiphase self-organization presents emergent opportunities for the customization of nanoscale engineering properties, dynamically tuning strain-field distributions and interfacial electronic structures. Responding to intense electronic excitation-induced energy deposition, the dominant phase transformations, with varying Gibbs free energy Δ Gfo, are confirmed as β → κ → γ → δ that are located in specific microregions for Gallium (III) oxide (Ga2O3). More details can be found in the Research Article by Wenxiang Mu, Shijun Zhao, Peng Liu, and co-workers (DOI: 10.1002/adma.202519259).
Fields of Study & Subjects
Ga2O3 and related materials
Inorganic Chemistry and Materials
Electronic and Structural Properties of Oxides
Publication details
- Journal / source
- Advanced Materials
- Publisher
- Wiley
- Volume
- 38
- Issue
- 23
- Publication date
- 1 April 2026
- Language
- EN