In‐situ p‐Doping of Nanometer Tellurium‐based Oxide for Room‐Temperature CMOS Circuits (Adv. Mater. 36/2026)

Advanced Materials 2026

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Authors: Mengfei He, Hamin Choi, Zhikai Le, Xiaomin Yang, Yanlin Huang, Youjin Reo, Sai Bai, Mingyang Wang, Huihui Zhu, Yong‐Young Noh, Ao Liu
DOI: 10.1002/adma.73719
Cited by: 1

Abstract

Room-Temperature CMOS Circuits A room-temperature in-situ redox strategy enables intrinsic p-doping of nanometer tellurium-based oxide films by creating tunable Te conductive channels within an oxide matrix. The resulting p-type transistors exhibit high mobility and broadly tunable carrier density, and can be monolithically integrated with n-type oxide devices to realize fully room-temperature all-oxide CMOS circuits. More details can be found in the Research Article by Ao Liu, Mingyang Wang, Huihui Zhu, Yong-Young Noh, and co-workers (DOI: 10.1002/adma.72813).

Fields of Study & Subjects

Thin-Film Transistor Technologies Nanowire Synthesis and Applications Ga2O3 and related materials

Publication details

Journal / source
Advanced Materials
Publisher
Wiley
Volume
38
Issue
36
Publication date
1 June 2026
Language
EN