Gallium Oxide RRAM: Materials, Fundamentals and Applications

ABSTRACT With the swift advancement of information technology, the demand for data storage is surging exponentially. Mainstream storage technologies are now constrained by physical limitations, making it difficult to improve storage density as well as read/write speeds. Meanwhile, the “storage‐computation” separation in the von Neumann architecture has also created an insurmountable “memory wall” bottleneck, and frequent data transfer reduces energy efficiency. To meet the demand for real‐time data processing and neuromorphic computing's need for in‐memory integration, there's an urgent need for new storage technologies offering ultra‐high density, speed, and storage‐computation integration. Recently, resistive random‐access memory (RRAM) has attracted considerable attention from researchers and stands out as a competitive candidate in the realm of non‐volatile memory. Gallium Oxide (Ga 2 O 3 ), an emerging ultra‐wide bandgap semiconductor material, has emerged as one of the most promising candidates for RRAM due to its unique electrical and physical properties. Herein, this paper introduces the material properties of Ga 2 O 3 , and outlines the working principle of Ga 2 O 3 RRAM, performance evaluation of Ga 2 O 3 RRAM and applications of Ga 2 O 3 RRAM. Finally, insights and perspectives on the future development of Ga 2 O 3 RRAM are discussed to promote its application in the field of storage and neuromorphic computing.