Ab‐initio Quantum Transport investigation of a Double‐Gated Zigzag Silicene Nanoribbon Spin Field‐Effect Transistor

ABSTRACT Silicene, once constrained by stringent synthesis conditions, is recently reported to be synthesizable using state‐of‐the‐art techniques such as VANS (Vacuum–Nitrogen Assisted protocol) and S‐SEDNE (Seamless Substrate‐Engineered Delamination and Encapsulation). This renewed feasibility drives our exploration of silicene‐based spin‐FETs considering the possible compatibility with existing electronic devices, which are predominantly constructed from silicon materials. Utilizing a silicene nanoribbon with a mirror‐version Z‐shaped zigzag structure as the channel material, a novel two‐gate spin‐field effect transistor (spin‐FET) is proposed and the impact of channel geometry is studied. The gate voltage‐driven current–voltage characteristics reveal oscillations in the electron current, which is a hallmark of the Datta–Das spin‐FET. Our results show that the proposed mirror‐version Z‐shaped geometry yields a nearly 100‐fold enhancement in drain current compared to its straight‐channel counterpart, highlighting the critical role of channel design in optimizing spintronic device performance.