Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware

ABSTRACT 2D ferroelectric materials have recently emerged as a promising class of atomically thin semiconductors capable of integrating sensing, memory, and computation within a single device. Their unique combination of spontaneous switchable polarization, strong light‐matter coupling, and van der Waals (vdW) interface compatibility provides an ideal platform for next‐generation optoelectronic vision sensors. Coupling ferroelectric polarization with photoresponse, 2D ferroelectric materials such as α ‐In 2 Se 3 , CuInP 2 S 6 (CIPS), SnS, and WTe 3 enable non‐volatile modulation of photocarrier transport, facilitating adaptive visual perception analogous to the human retina. These 2D ferroelectric photonic devices demonstrate synaptic plasticity, short‐term and long‐term memory, and optical potentiation and depression characteristics under visible and near‐infrared excitation. Integrating ferroelectricity into optoelectronic architectures addresses the von‐Neumann bottleneck by enabling in‐sensor computing, where data are sensed, stored, and processed locally, minimizing latency and energy consumption. This review provides a comprehensive overview of 2D ferroelectric materials and their device architectures in the memristive and memtransistors devices structures for optoelectronic vision sensors, highlighting their polarization mechanism, light‐driven conductance modulation, and neuromorphic functionalities. Additionally, current challenges, such as scalability, polarization fatigue, and interface engineering, have also been extensively discussed together with heterostructure design and hybrid ferroelectric‐semiconductor integration toward energy‐efficient bio‐inspired vision systems.