Amorphous Ga 2 O 3 and Temperature‐Tolerant Solar‐Blind Ultraviolet Photodetectors for Extreme Environments

ABSTRACT Environment‐adaptabilities are always critical for optical and electrical components while Ga 2 O 3 thin films have been attractive in UV photodetectors, flexible optoelectronics and multifunctional integrations. Here, we present the atomic‐layer deposited amorphous Ga 2 O 3 thin films and the solar‐blind UV photodetectors with temperature‐adaptabilities across a wide temperature range of 100–450 K. The devices exhibit an excellent responsivity (∼3.99 mA/W) and detectivity (∼1.19 × 10 11 Jones) at 120 K, and remain operational during temperature changes between 100 and 450 K. The distinct non‐monotonic variations that were observed in the UV photoresponses may originate from the thermal‐driven evolution of oxygen‐vacancy‐related trap states. We believe that these investigations will provide an alternative approach to understanding amorphous Ga 2 O 3 thin films and temperature‐tolerant devices, and exploring reliable integration used for sensing and observation under extreme environment changes.