Extreme Transverse Magnetoresistance in TiZn 16

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Authors: Aaron Chan, Guoxin Zheng, Dechen Zhang, Y. Zhu, Kaila Jenkins, Kuan‐Wen Chen, Haozhe Wang, Weiwei Xie, Brianna R. Billingsley, Tai Kong, Na Hyun Jo, L. Li
Cited by: 0
References: 19

Abstract

ABSTRACT Extreme magnetoresistance (XMR) is a phenomenon characterized by an increase in resistance by factors of 10 4 –10 7 % when a magnetic field is applied. This phenomenon is found in a number of semimetals such as WTe 2 , PtSn 4 , Cd 3 As 2 , and LaSb. The origin of XMR is still hotly debated, possibly with different materials having different (or multiple) explanations. Extreme transverse magnetoresistance of up to 8000% at 14 T and 1.8 K is measured in TiZn 16 , a semimetal with a multitude of bands crossing the Fermi energy, akin to PtSn 4 . The magnetoresistance is suppressed when the magnetic field is rotated to be parallel to the applied current, similar to PtSn 4 and PdSn 4 . The resistance of TiZn 16 follows Kohler's rule, but displays different behavior under an applied transverse field and under a longitudinal magnetic field, suggesting distinct electrical phases. Also present are Shubnikov‐de Haas and de Haas‐van Alphen oscillations with a transverse magnetic field up to 43 T, showing that despite an insulator‐like temperature‐resistance curve, charge carriers are still present. This positions TiZn 16 as an interesting addition to the investigation of XMR materials as a multi‐band metal with complex Fermi surface geometries.

Fields of Study & Subjects

Rare-earth and actinide compounds Advanced Thermoelectric Materials and Devices Topological Materials and Phenomena

Publication details

Journal / source
Advanced Electronic Materials
Volume
12
Issue
3
Publication date
4 January 2026
Language
EN