Electrode‐Engineered Dual‐Mode Multifunctional Lead‐Free Perovskite Optoelectronic Memristors for Neuromorphic Computing

ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb) element should be minimized or ideally replaced. Herein, we introduce a multifunctional device based on AgBiI 4 Pb‐free perovskite as the active layer in a normal n‐i‐p solar cell configuration that exhibitss multiple mode‐dependent neuromorphic functions. Specifically, through electrode engineering, we show a selection between volatile or non‐volatile memristive switching when the Au top electrode is replaced by Ag. The volatile device having an Au top electrode can be used for emulating threshold‐dependent artificial neuron firing processes, while the non‐volatile device with Ag pads can emulate numerous synaptic protocols (LTP/LTD, PPF, STDP, SRDP, LTM, STM). Both volatile (V TH = −0.86 V) and non‐volatile modes possess switching low voltages