Toward Stable and High‐Performance Metal Halide Perovskite Field‐Effect Transistors

ABSTRACT There is a critical need for high‐quality perovskite semiconductor films to enable highly stable field‐effect transistors (FETs) for future integrated systems. A major challenge is ion migration in hybrid halide perovskites (HHPs), which leads to hysteresis and compromises device stability and performance. Hysteresis, primarily caused by ion migration and charge trapping, results in inaccurate device metrics, such as overestimated or underestimated output and drain currents, along with poor operational stability. Therefore, it is essential to develop effective strategies to suppress ion migration within the perovskite channel layers to achieve hysteresis‐free, bias‐stable, and long‐term reliable FETs. This review discusses the degradation mechanisms affecting perovskite FETs and explores potential solutions to enhance their stability for future large‐scale fabrication. Key challenges such as hysteresis under illumination, material and device stability, scalability issues, and the presence of hazardous elements are examined. Strategies including interface and compositional engineering, the use of 2D or quasi‐2D layered perovskite materials, grain boundary engineering, and encapsulation techniques are proposed to overcome these limitations.