Thickness Scaling of Integrated Pt/(Al 0.9 Sc 0.1 )N/Pt Capacitor Stacks to 30 nm (Adv. Electron. Mater. 1/2026)

Advanced Electronic Materials 2026 Open access

Read full text
Authors: Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Nana Sun, Yoshiko Nakamura, Kazuki Okamoto, Hiroshi Funakubo
DOI: 10.1002/aelm.70215
Cited by: 0

Abstract

Ferroelectric Memory In their Research Article (10.1002/aelm.202500451), Hiroshi Funakubo and co-workers demonstrate that the total thickness of the device stack can be scaled down to 30 nm for the first time while maintaining a remanent polarization exceeding 100 μC cm−2 using an aluminum scandium nitride ((Al,Sc)N) film sandwiched between Pt electrodes. This next-generation nitride ferroelectric material enables aggressive thickness scaling for integration into ferroelectric memory, representing a significant advance for future electronic devices.

Fields of Study & Subjects

Ferroelectric and Piezoelectric Materials Ferroelectric and Negative Capacitance Devices Acoustic Wave Resonator Technologies

Publication details

Journal / source
Advanced Electronic Materials
Volume
12
Issue
1
Publication date
1 January 2026
Language
EN