Ultra‐Fast, Low‐Resistance Nano Gap Electromechanical Switch for Power Gating Applications (Adv. Electron. Mater. 2/2026)
Abstract
Low-Power Semiconductor Systems This cover concept illustrates how a microelectromechanical systems (MEMS) power-gating switch could control power delivery to CMOS logic blocks. In their Research Article (10.1002/aelm.202500668), Yong-Bok Lee, Jun-Bo Yoon, and co-workers develop a nano-gap MEMS switch optimized for power gating, featuring a 20 nm air gap and high-stiffness design that enable 0.95 Ω on-resistance, 30 ns switching time, and
Fields of Study & Subjects
Advanced MEMS and NEMS Technologies
Advanced Memory and Neural Computing
Advanced Sensor and Energy Harvesting Materials
Publication details
- Journal / source
- Advanced Electronic Materials
- Volume
- 12
- Issue
- 2
- Publication date
- 1 January 2026
- Language
- EN