X‐Ray TID Suppresses Inhibitory Plasticity of SnO‐Based Memristors and Its Impact on Neuromorphic Computation

Advanced Electronic Materials 2026 Open access

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Authors: Aiden Graham, Zohreh Hajiabadi, Alexander- Hanyu Wang, Asep Nugroho, Om Kumar Prasad, Uma Sankar Rout, Christian Patzig, Irwan Purnama, Liam Godfrey, M. Borri, Bingkai Ding, Harold M. H. Chong
+1 more Firman Mangasa Simanjuntak
DOI: 10.1002/aelm.70511
Cited by: 0

Abstract

ABSTRACT X‐ray total ionization dose (TID) significantly modifies synaptic plasticity in SnO‐based volatile memristors, a device class promising for neuromorphic computing in radiation‐exposed environments. We further observe that synaptic operation becomes more stable when training is initiated after a reset, indicating a protocol‐dependent mitigation of variability. Device‐parameterized convolutional neural network simulations indicate that nonlinearity and epoch‐to‐epoch variation both decrease in irradiated devices, leading to higher training accuracy (≈80% after 200 epochs) than pristine counterparts (

Fields of Study & Subjects

Advanced Memory and Neural Computing Transition Metal Oxide Nanomaterials Ferroelectric and Negative Capacitance Devices

Publication details

Journal / source
Advanced Electronic Materials
Volume
12
Issue
16
Publication date
1 August 2026
Language
EN