Optoelectronic Neuromorphic System Based on Amorphous Indium–Gallium–Zinc–Oxide Thin‐Film Transistor for Spiking Neural Networks

Advanced Intelligent Systems 2026 Open access

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Authors: Yumin Yun, Junhyeong Park, Minsik Kong, Ji‐Ho Lee, Bae Sh, Chanjin Park, Soo‐Yeon Lee
DOI: 10.1002/aisy.70217
Cited by: 1

Abstract

Optoelectronic Neuromorphic System This research introduces an indium-gallium-zinc-oxide (IGZO)-based optoelectronic neuromorphic system, including an IGZO optoelectronic synaptic transistor array with light guides and IGZO optoelectronic neuron circuits. The IGZO synaptic transistor exhibits high-retention synaptic plasticity under negative voltage bias. The IGZO neuron circuit is experimentally validated, revealing its dual functionality as a signal driver during programming and as an I&F neuron during inference. More details can be found in the Research Article by Soo-Yeon Lee and co-workers (DOI: 10.1002/aisy.202500402).

Fields of Study & Subjects

Advanced Memory and Neural Computing Neural Networks and Reservoir Computing Ferroelectric and Negative Capacitance Devices

Publication details

Journal / source
Advanced Intelligent Systems
Publisher
Wiley
Volume
8
Issue
1
Publication date
1 January 2026
Language
EN