Outside Back Cover: Atomically Precise Interfacial Engineering on Tin‐Silicon Oxo Clusters for Sub‐8 nm Lithography (Angew. Chem. Int. Ed. 16/2026)
Abstract
In the Research Article (e24320), Ni Zhen, Lei Zhang, and co-workers report the atomic-level interfacial engineering of tin oxo cluster photoresists by decorating silane moieties. The exposed Sn-O-Si and Si-O-Si networks have significantly enhanced both multiple crosslinking and substrate adhesion, giving rise to high-fidelity patterning at the sub-8 nm scale. This work provides a potential material design strategy for next-generation ultrahigh resolution lithography in advanced chip technology nodes.
Fields of Study & Subjects
Advancements in Photolithography Techniques
Nanofabrication and Lithography Techniques
Semiconductor materials and devices
Publication details
- Journal / source
- Angewandte Chemie International Edition
- Volume
- 65
- Issue
- 16
- Publication date
- 9 March 2026
- Language
- EN