New Insights of Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films Properties Under Cryogenic Temperatures in Integrated Ferroelectric Capacitors (Adv. Phys. Res. 2/2026)

Advanced Physics Research 2026 Open access

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Authors: Flavien Berthaud, Niccolò Castellani, Nicolas Vaxelaire, Guillaume Freychet, Amanda Mallmann Tonelli, Liam Hosier, Jean Rottner, Catherine Carabasse, M. Cassé, L. Grenouillet, Simon Martin
DOI: 10.1002/apxr.70098
Cited by: 0

Abstract

Low-Temperature Ferroelectric Properties in HZO Capacitors The study by Flavien Berthaud and co-workers highlights the potential of HZO ferroelectric capacitors for low-temperature applications. A new electrical characterization method to isolate domain switching is presented in Research Article e00127; it reveals a two step switching mechanism that causes the pinched hysteresis at room temperature.

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Ferroelectric and Piezoelectric Materials Multiferroics and related materials

Publication details

Journal / source
Advanced Physics Research
Volume
5
Issue
2
Pages
e70098
Publication date
1 February 2026
Language
EN