A New Y‐Function MOSFET Mobility Extraction Method Accounting for Coulomb Scattering at Cryogenic Temperatures

International Journal of Numerical Modelling Electronic Networks Devices and Fields 2026 Open access

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Authors: Shilong Li, Chengbo Yang, Hao Su, Haoyang Li, Yuhuan Lin, Yiyuan Cai, Zhizhao Ma, Shenpei Zhou, Longyang Lin, Feichi Zhou, Hongyu Yu, Kai Chen
+1 more Yida Li
DOI: 10.1002/jnm.70147
Cited by: 1
References: 13

Abstract

ABSTRACT Relatively few in‐depth studies on MOSFET mobility are published at cryogenic temperatures partially due to lack of appropriate extraction method associated with more complicated scattering mechanisms than at room temperature. This paper, for the first time, proposes a new Y‐function method, which is both physically and engineering novel, for mobility extraction considering the Coulomb scattering that dominates toward cryogenic temperatures. This new Y‐function method demonstrates excellent fit with measurement data taken from foundry fabricated 180 nm bulk MOSFETs for the temperature range from 300 down to 4 K.

Fields of Study & Subjects

Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and devices Silicon and Solar Cell Technologies

Publication details

Journal / source
International Journal of Numerical Modelling Electronic Networks Devices and Fields
Publisher
Wiley
Volume
39
Issue
1
Publication date
1 January 2026
Language
EN