Optoelectronic Properties of CuS Nanoparticles for Potential Application in Memory Devices

This study reports the synthesis of copper sulfide (CuS) nanoparticles viathe chemical bath deposition method. The structural properties of the synthesized CuS were examined using X‐ray diffraction, confirming the crystalline phase and enabling the estimation of particle size and lattice parameters. Optical characterization was conducted using photoluminescence (PL) and UV–visible (UV–vis) spectroscopy. PL analysis revealed emissions associated with intrinsic defect states, while the UV–vis spectra were used to determine the optical bandgap, indicatingthe presence of quantum confinement effects. Electrical measurements showed a transition from nearly linear current–voltage (I–V) behavior at low precursor concentrations to nonlinear characteristics at higher concentrations, suggesting a defect‐mediated charge transport mechanism. Additionally, a CuS‐graphene oxide (GO) heterojunction was fabricated and exhibited pronounced negative differential resistance, significantly influencing the I–V response. Cyclic voltage sweep measurements of the CuS‐GO heterostructure produced pinched hysteresis loops, characteristic of memristive behavior, highlighting its potential for next‐generation memory storage and neuromorphic computing applications. Overall, this workhighlightsthe tunable optoelectronic properties of CuS and its promising role in advanced nanoelectronic device architectures.