Analytical Investigation of Temperature‐Dependent Characteristics in 4.5 kV SiC Super‐Junction Devices

We quantitatively analyze the effects of incomplete ionization and deep‐level traps on the electrical characteristics of 4.5 kV SiC super‐junction devices using technology computer‐aided design (TCAD) simulations. Variations in mobility, incomplete ionization, and deep‐level traps with temperature cause changes in the charge imbalance or effective doping concentration of the super‐junction structure. Since the super‐junction structure is highly sensitive to charge balance between pillars, variations in temperature‐dependent physical factors directly affect the on‐resistance and breakdown voltage. This study presents the key roles of these physical factors in the operating characteristics of SiC super‐junction devices and provides important physical insights necessary for device design and evaluation.