Improved Hole‐Injection Efficiency of AlGaN Deep Ultraviolet Light‐Emitting Diodes by p‐AlGaN Superlattices With Multiple Quantum Barriers

P‐AlGaN multiple quantum barriers (MQBs) and p‐AlGaN superlattices (SLs) were simultaneously incorporated into AlGaN‐based ultraviolet‐C (UV‐C) light‐emitting diodes (LEDs) to enhance the hole‐injection efficiency (HIE) of the active region. The synergistic integration of p‐AlGaN SLs and MQBs enabled a significant increase in light output power while simultaneously reducing the operating voltage. To investigate these effects, three types of p‐layer configurations were compared: a conventional p‐AlGaN electron blocking layer (EBL) with a p‐AlGaN cladding layer (UV LED 1), p‐AlGaN MQBs with a p‐AlGaN cladding layer (UV LED 2), and p‐AlGaN MQBs integrated with p‐AlGaN SLs (UV LED 3). At an injection current of 200 mA, UV LED 3 exhibited a 0.7 V reduction in operating voltage and an approximately fourfold enhancement in optical output power compared to UV LED 1. These experimental findings were further validated through numerical simulations using the APSYS program, which revealed a more uniform and enhanced carrier distribution within the AlGaN multiple quantum wells. These results suggest that the integrated MQB and SL architecture is a highly effective strategy for realizing high‐performance, energy‐efficient deep UV (DUV) LEDs.