Performance Improvement of Photodetectors Employing ZnSe and Cz‐P Transport Layers

Perovskite materials have gained widespread attention as efficient photoactive layers in a range of optoelectronic devices, including light‐emitting diodes, photodetectors, and lasers, due to their exceptional optoelectronic properties. In this study, a numerical model of a vertical architecture photodetector is presented, using rubidium germanium iodide (RbGeI 3 ) as main light‐absorbing material to improve the performance of the device. Zinc selenide (ZnSe) is employed as electron transport layer, while the benzene ring‐based Cz‐P serves as hole transport layer. Carbon and fluorine‐doped tin oxide are utilized as the front and back electrodes, respectively. The simulations were performed using the SCAPS‐1D simulation software tool. Through the optimization of the thickness and doping concentration of the photoactive layer, a responsivity of 0.75 AW −1 and a specific detectivity of 4.0 × 10 13 Jones were obtained. These values show that the proposed device structure is compatible with solution‐processed fabrication methods and has adjustable bandgap properties based on the dimensionality of the perovskite material.