Model of Dark Current in Silicon‐Based Barrier Impurity Band Infrared Detector Devices
Abstract
Dark current in silicon‐based blocked impurity band (BIB) infrared detectors has long been a critical limitation on device performance. This work proposes a chiral‐phonon‐assisted spin current model at interfaces to explain the parabolic‐like dark current behavior observed at low bias voltages. Concurrently, the space charge limited current (SCLC) theory is employed to elucidate the dark current generation mechanism across the entire operational voltage range.
Fields of Study & Subjects
Advanced Semiconductor Detectors and Materials
Semiconductor materials and interfaces
Quantum and electron transport phenomena
Publication details
- Journal / source
- physica status solidi (b)
- Volume
- 263
- Issue
- 3
- Publication date
- 1 March 2026
- Language
- EN