Thermal Evolution of Excitons and Defect‐Localized States in Monolayer 2H‐MoTe 2

A monolayer of hexagonal molybdenum ditelluride (2H‐MoTe 2 ), characterized by strong spin–orbit coupling and a relatively small energy gap (1.1 eV), is highly promising for valleytronics and excitonic device applications. In this work, we investigate the temperature‐dependent evolution of exciton complexes in monolayer 2H‐MoTe 2 using temperature‐dependent photoluminescence (PL) spectroscopy, complemented by excitation power‐dependent measurements. We clearly identify neutral exciton ( ∼ 1.19 eV) and trion ( ∼ 1.162 eV) states and systematically analyze their temperature‐dependent shifts using both the semi‐empirical model and the Varshni relation. Additionally, we observe an additional peak at ∼1.132 eV, attributed to a localized defect‐bound excitonic state, supported by excitation power‐dependent PL analysis. These results provide important insights into defect‐induced modifications of the excitonic fine structure and deepen our understanding of exciton dynamics in this two‐dimensional semiconductor.