Void‐Controlled Resistive Switching in MnTe 2 ‐Based Device

Owing to their unique structural and electronic properties, transition metal dichalcogenides have recently attracted significant attention for advanced electronic device applications. In this study, we report the first investigation on the resistive switching behavior of MnTe 2 ‐based device with a W/MnTe 2 /W structure, in which tungsten is employed as a passive electrode to suppress undesired electrode reactions. The device exhibits both volatile and nonvolatile resistive switching behaviors, demonstrating the versatility of MnTe 2 ‐based device. The nonvolatile resistive switching behavior is attributed to the formation and annihilation of voids driven by thermally assisted electromigration of Mn and Te ions. Furthermore, Te clustering near the electrode interface gives rise to a self‐selective behavior, which may eliminate the need for an external selector in three‐dimensional cross‐point architectures.