Innovative Threshold‐Changeable Memory Based on Amorphous GeSbSeN

This study investigates the behavior of a Threshold‐Changeable Memory (TCM) device based on an amorphous GeSbSeN (GSSN) alloy. A dedicated programming protocol is optimized to induce polarity‐dependent threshold voltage modulation. Building on this programming protocol, the influence of elemental composition, particularly variations in Sb and N content, is examined to determine its effect on the achievable MW and the efficiency of the programming process. In addition, a systematic time‐dependent drift analysis is performed as a function of Sb content to investigate the impact of Sb incorporation on threshold voltage stability. Activation energy extraction and temperature‐dependent measurements are performed to provide further insight into the mechanisms responsible for polarity‐induced threshold voltage modulation. These results offer key insights about the origin of the TCM mechanism in GSSN alloys and establish a solid foundation for the future development of this emerging memory technology.