Cover Feature: Million‐Atom Wave Function Simulations of a Single Donor Qubit Made in Silicon Utilizing Ion Implantation Technology (Adv. Quantum Technol. 1/2026)

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Authors: Haolin Huang, Liam G. Thomas, Muhammad Usman, Rajib Rahman, David N. Jamieson
Cited by: 0

Abstract

A silicon crystal hosts an ion implanted phosphorus atom with a nuclear spin surrounded by its simulated donor electron wavefunction in a quantum superposition between the donor atom and a potential well from an isolated surface electrode. A Moiré pattern arises from periodic localisation of the wavefunction around silicon atoms in the crystal that are spaced 0.5 nm apart. More in article number e00675, David N. Jamieson and co-workers.

Fields of Study & Subjects

Quantum and electron transport phenomena Semiconductor Quantum Structures and Devices Diamond and Carbon-based Materials Research

Publication details

Journal / source
Advanced Quantum Technologies
Volume
9
Issue
1
Publication date
1 January 2026
Language
EN