Excellent Comprehensive Electromechanical Properties in PZT‐Based Hard High‐Temperature Piezoceramics

ABSTRACT High‐power piezoelectric ceramics which have a wide operating temperature range are essential for sensor and actuator applications in extreme conditions. However, their development is fundamentally hindered by the inherent trade‐off among key parameters ( T C , d 33 , Q m ). To transcend these limitations, we proposed a hierarchical design strategy in 0.97Pb(Zr x Ti 1‐ x )O 3 ‐0.03Bi(Mn 1/2 Ti 1/2 )O 3 ceramics: Bi 3+ and Mn 2+/3+ as lattice constituents occupy A and B‐sites to stabilize the morphotropic phase boundary at x = 0.51, reducing polarization rotation barriers ( d 33 = 405 pC N −1 ) and sintering temperature (1080°C). Additionally, the subsequent introduction of 0.2 wt% MnCO 3 as an extrinsic dopant facilitates dual‐site occupation, resulting in gradient‐distributed oxygen vacancies that form ordered defect dipoles. The local random field disrupts ferroelectric long‐range ordering, fostering a complex domain architecture that features both sub‐micron and nanodomains. This stabilizes a dynamic equilibrium between irreversible domain‐wall pinning and reversible polarization switching. Thus, the optimized material exhibits outstanding comprehensive electrical properties: d 33 = 418 pC N −1 , Q m = 550, T C = 351°C, k P = 0.59, tan δ = 0.0027. This work presents a novel material design paradigm for high‐temperature high‐performance piezoelectric materials.