Transition Between Digital Switching and Analog Synapse in AgO x /SnSe 2 Memristor Through Thickness Engineering

ABSTRACT Inspired by biological synapses, memristors are regarded as key components for overcoming the limitations of traditional von Neumann architectures. A major challenge lies in achieving controllable switching between digital and analog functionalities within the same device. In this work, we demonstrate an AgO x /SnSe 2 ‐based memristor in which digital and analog switching behaviors can be modulated by adjusting the AgO x layer thickness. The device is fabricated through moderate‐temperature thermal oxidation, and the switching transition is likely related to oxygen‐vacancy filament evolution influenced by AgO x thickness. In the digital switching mode, when AgO x layer is thick (75 nm), the device exhibits an abrupt switching characteristic with a high ON/OFF ratio exceeding 10 6 , ultra‐low subthreshold swing below 10 mV dec −1 , 5000 s retention, and air stability under tested conditions. In contrast, with a thinner AgO x layer (35 nm), the device shows a gradual resistive switching process, indicative of analog synapse behavior, which could enable synaptic weight modulation and signal recognition, such as electrocardiogram (ECG) signals, within the measured conditions. This work presents a facile thickness engineering strategy for digital‐to‐analog tuning behaviors and underscores the potential of silver oxide‐based memristors for multifunctional memory and neuromorphic computing.