Achieving Excellent Nonlinear Optics in α ‑Ba 2 Ge 4 S 10 via Flux‑Induced Symmetry Breaking

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Authors: Ying Guo, Guo‐Qiang Wang, Yan Guo, Xiao‐Ming Jiang, B C Liu, Guo‐Cong Guo
Cited by: 1
References: 57

Abstract

ABSTRACT Although noncentrosymmetry is an essential prerequisite for second‐order nonlinear optical (NLO) effects, achieving it remains synthetically challenging. To date, the flux method has seldom been utilized to induce a transition from centrosymmetric to noncentrosymmetric structure. Herein, we successfully synthesized the noncentrosymmetric α ‐Ba 2 Ge 4 S 10 phase via flux‐induced symmetry breaking from centrosymmetric β ‐Ba 2 Ge 4 S 10 , enabling the growth of millimeter‐sized single crystal (up to 10 × 4 × 4 mm 3 ) using a sealed‐system flux method. Structurally, the structure of α ‐Ba 2 Ge 4 S 10 consists of zero‑dimensional supertetrahedral [Ge 4 S 10 ] 4– clusters charge‐balanced by Ba 2+ ions. Optically, α ‐Ba 2 Ge 4 S 10 displays a competitive phase‑matching second‐harmonic generation response (1.2 × AgGaS 2 @2050 nm) and a broad infrared transparency range (2.5–12.8 µm). To our knowledge, this is the first NLO material based on T2‐[Ge 4 S 10 ] clusters. Moreover, the introduction of electropositive Ba 2+ as a structural spacer in α ‐Ba 2 Ge 4 S 10 contributes to a wide optical band gap (3.15 eV) and a significantly enhanced laser‑induced damage threshold (14.8 × AgGaS 2 ), underscoring its promising NLO applicability. This study demonstrates that controlled phase transformation from centrosymmetric to noncentrosymmetric structures via the flux method offers a viable strategy for designing high‑performance NLO materials.

Fields of Study & Subjects

Crystal Structures and Properties 2D Materials and Applications Chalcogenide Semiconductor Thin Films

Publication details

Journal / source
Small
Publisher
Wiley
Volume
22
Issue
44
Pages
e74239–e74239
Publication date
24 June 2026
Language
EN