Versatile Metal Phthalocyanine‐Based Memristive Nanowire Network: Unraveling the Dynamics of Digital to Analog Switching

Organic memristors with tunable resistive switching (RS) are promising candidates for brain‐inspired neuromorphic computing. This study reports a self‐assembled organic nanowire network memristor based on copper (II) hexadecafluoro‐phthalocyanine (F 16 CuPc), exhibiting digital, multilevel, and analog switching through compliance current ( I CC ) modulation. Current–voltage and impedance analyses reveal that the transition in RS behavior is primarily driven by a shift from trap‐limited to trap‐free space charge‐limited conduction as I CC increases. In low I CC , Ag + ‐cation migration plays a central role in conduction through redox‐assisted Ag–F/ Ag–π interwire interactions, causing abrupt switching. In contrast, higher allowed injection at high I CC enables predominant intrawire current conduction via π–π intermolecular interactions, resulting in a gradual RS transition. The novelty of this work lies in the controlled growth of nanowire structures via self‐assembled 2D molecular stacking, which is key to enabling multifunctionality within a pristine, nanowire network‐based molecular memristive system designed for hybrid digital‐neuromorphic applications. These findings significantly broaden the functional scope of metal phthalocyanine‐based nanowire network architecture, advancing their application toward flexible, energy‐efficient, multifunctional, and wearable smart electronics.