Role of Traps in Gate Leakage Current in p-gate GaN HEMTs Through TCAD Simulations

Lecture notes in electrical engineering 2026

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Authors: Edoardo De Ruvo, Simona Donati Guerrieri, Fabrizio Bonani
DOI: 10.1007/978-3-032-17305-8_6
Cited by: 1
References: 26

Fields of Study & Subjects

GaN-based semiconductor devices and materials Advancements in Semiconductor Devices and Circuit Design Silicon Carbide Semiconductor Technologies

Publication details

Journal / source
Lecture notes in electrical engineering
Publisher
Springer Nature Switzerland
Pages
43–50
Publication date
1 January 2026
Language
EN