High-Linearity Al0.3Ga0.7N/GaN HEMTs for Spectrum-Efficient millimetre-Wave (m-Wave) IoE Networks

Lecture notes in electrical engineering 2026 Book chapter

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Authors: Rayabarapu Venkateswarlu, Samarendra Samal, Kasiprasad Mannepalli, Dr Suman Maloji, Bibhudendra Acharya, Guru Prasad Mishra
DOI: 10.1007/978-981-95-4415-8_10
Cited by: 0
References: 34

Fields of Study & Subjects

GaN-based semiconductor devices and materials Advanced Power Amplifier Design Radio Frequency Integrated Circuit Design

Publication details

Journal / source
Lecture notes in electrical engineering
Pages
179–198
Publication date
1 January 2026
Language
EN
Document type
Book chapter