Research on Radiation-Sensitive Parameters of Secondary Side Drive Protection Circuit for Extra-High Voltage IGBT Drivers in Power Electronics and Radiation Damage Effects of Its 0.18 μm BCD Process Device Units

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Authors: Gang Liu, Ming-Xin Gao, Jihao Chen, Hang-Yu Xu
Cited by: 0
References: 16

Fields of Study & Subjects

Radiation Effects in Electronics Silicon Carbide Semiconductor Technologies Particle Detector Development and Performance

Publication details

Journal / source
Lecture notes in electrical engineering
Pages
30–38
Publication date
1 January 2026
Language
EN