Research on Radiation-Sensitive Parameters of Secondary Side Drive Protection Circuit for Extra-High Voltage IGBT Drivers in Power Electronics and Radiation Damage Effects of Its 0.18 μm BCD Process Device Units
Fields of Study & Subjects
Radiation Effects in Electronics
Silicon Carbide Semiconductor Technologies
Particle Detector Development and Performance
Publication details
- Journal / source
- Lecture notes in electrical engineering
- Pages
- 30–38
- Publication date
- 1 January 2026
- Language
- EN