Negative Capacitance Source Pocket Double-Gate Tunnel FET: Optimizing Device Dimensions for Superior Performance
Fields of Study & Subjects
Advancements in Semiconductor Devices and Circuit Design
Semiconductor materials and devices
Ferroelectric and Negative Capacitance Devices
Publication details
- Journal / source
- Lecture notes in electrical engineering
- Pages
- 359–368
- Publication date
- 1 January 2026
- Language
- EN