Research on the bipolar switching properties of flexible neodymium oxide thin film resistance random access memory devices

Applied Physics A 2026

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Authors: K. Chen, Ming-Cheng Kao, Hsin-Chin Chen, Yao‐Chin Wang, Chien-Min Cheng, Wei-Cheng Liu
DOI: 10.1007/s00339-025-09236-w
Cited by: 1
References: 27

Fields of Study & Subjects

Advanced Memory and Neural Computing Transition Metal Oxide Nanomaterials Ferroelectric and Negative Capacitance Devices

Publication details

Journal / source
Applied Physics A
Publisher
Springer Science and Business Media LLC
Volume
132
Issue
1
Publication date
1 January 2026
Language
EN