Design and performance study of a recessed-gate FET infrared photodetector featuring a compositionally graded InAlAs barrier layer

Applied Physics A 2026

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Authors: Jiang Wang, Jiabin Li, Yu Lei, Lin Zhou

DOI: 10.1007/s00339-026-09404-6

Cited by: 0

References: 35

Fields of Study & Subjects

Advanced Semiconductor Detectors and Materials Photonic and Optical Devices Semiconductor materials and interfaces

References 35